1/3 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.b general purpose transistor (isolated dual transistors) imx25 ? features ? dimensions (unit : mm) 1) two 2sd2704k chips in a smt package. 2) mounting possible with smt3 automatic mounting machine. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. ? structure epitaxial planar type npn silicon transistor the following characteristics apply to both tr 1 and tr 2 . ? absolute maximum ratings (ta=25 ?c) ? inner circuit ? electrical characteristics (ta=25 ?c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) min. 50 20 25 ? ? 820 ? ? ? ? ? ? ? 50 ? ? ? 0.1 0.1 2700 100 v i c =10a i c =1ma i e =10a v cb =50v v eb =25v v ce =2v, i c =4ma i c /i b =30ma/3ma v v a a ? mv typ. max. unit conditions f t ron cob ? ? ? 35 0.7 3.9 ? ? ? v ce =6v, i e =? 4ma, f=10mhz i b =5ma, v i =100mvrms, f=1khz v cb =10v, i e =0a, f=1mhz mhz pf collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency output capacitance output on-resistance collector-emitter saturation voltage ? packaging specifications imx25 part no. t110 3000 packaging type code basic ordering unit (pieces) taping rohm : smt6 eiaj : sc-74 abbreviated symbol: x25 (1) (2) (3) 0.3 +0.1 ?0.05 1.6 2.80.2 +0.2 ?0.1 (6) (5) (4) 0.95 0.95 1.90.2 2.90.2 1.1 +0.2 0.80.1 ?0.1 0 to 0.1 0.3 to 0.6 0.15 ?0.06 +0.1 all terminals have same dimensions parameter symbol limits unit v cbo 50 v v ceo 20 v v ebo 25 v i c 300 ma tj 150 c tstg ?55 to +150 c pd 300(total) mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 200mw per element must not be exceeded. tr 2 tr 1 (4) (5) (6) (3) (2) (1)
2/3 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.b data sheet imx25 ? electrical characteristic curves 0 0.2 0.4 0.6 0.8 1 1 .2 0.1 0.1 10 100 1000 collector current : i c (ma) base to emitter voltage : v be(on) (v) fig.1 grounded emitter propagatio n characteristics ( ) v ce = 2v 25c ?40c ta=125c collector current : i c (ma) fig.2 grounded emitter propagatio n characteristics ( ) 0 0.2 0.4 0.6 0.8 1 1 .2 0.1 0.1 10 100 1000 base to emitter voltage : v be(on) (v) v ce = 6v 25c ?40c ta=125c 1 10 100 100 0 10 100 1000 10000 ta = ? 40c ta = 25c ta = 125c dc current gain : h fe collector current : i c (ma) fig.3 dc current gain vs. collector current ( ) v ce =2v dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 1 10 100 100 0 10 100 1000 10000 ta = ? 40c ta = 25c ta = 125c v ce =6v 1 10 100 1000 1 100 10 1000 10000 ta = ? 40c ta = 25c ta = 125c collector current : i c (ma) fig.5 collector-emitter saturation voltag e vs. collector current ( ) i c /i b =10/1 collector saturation voltage : v ce(sat) (mv ) 1 10 100 1000 1 100 10 1000 10000 ta = ? 40c ta = 25c ta = 125c collector current : i c (ma) i c /i b =20/1 collector saturation voltage : v ce(sat) (mv ) fig.6 collector-emitter saturation voltag e vs. collector current ( ) 1 10 100 1000 1 100 10 1000 10000 ta = ? 40c ta = 25c ta = 125c collector current : i c (ma) i c /i b =50/1 collector saturation voltage : v ce(sat) (mv ) fig.7 collector-emitter saturation voltag e vs. collector current ( ) ? fig.8 base-emitter saturation voltag e vs. collector current ( ) 1 10 100 100 0 100 1000 10000 ta = ? 40c ta = 25c ta = 125c collector current : i c (ma) i c /i b =10/1 base saturation voltage : v be(sat) (m v) ? fig.9 base-emitter saturation voltag e vs. collector current ( ) collector current : i c (ma) base saturation voltage : v be(sat) (m v) 1 10 100 100 0 100 1000 10000 ta = ? 40c ta = 25c ta = 125c i c /i b =20/1 ? ? ? ?
3/3 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.b data sheet imx25 fig.10 base-emitter saturation voltag e vs. collector current ( ) collector current : i c (ma) base saturation voltage : v be(sat) (m v) 1 10 100 100 0 100 1000 10000 ta = ? 40c ta = 25c ta = 125c i c /i b =50/1 ? fig.11 gain bandwidth product vs. emitter current 11 01 0 0 1 10000 ta= 25c f=50mhz i e =0a emitter current : i e (ma) transition frequency : f t (mhz) ? fig.12 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector output capacitance : cob (pf ) emitter input capacitance : cib (pf) collector to base voltage : v cb (v ) emitter to base voltage : v eb (v) 11 01 0 0 0.1 1 10 100 ta= 25c f=1mhz i e =0a ? ? ? ? 0.01 0.1 1 10 0 10 0.1 1 100 10 ta = 25 c see fig.15 on resistance : ron () fig.13 output-on resistance vs. base current ( ) base current : i b (ma) ? 0.01 0.1 1 10 0 10 0.1 1 100 10 ta =25 c see fig.16 on resistance : ron () fig.14 output-on resistance vs. base current ( ) base current : i b (ma) ? ? ? ? ? ron measurement circuit ron= r l v 0 v 0 v i? v 0 r l =1k i b outp ut input 1 00mv(rms) 1v(rms) f=1khz v i v fig.15 ron measurement circuit ( ) ron= r l v 0 v 0 v i? v 0 r l =1k i b outp ut input 1 00mv(rms) 1v(rms) f=1khz v i v fig.16 ron measurement circuit ( ) this product might cause chip aging and breakd own under the large electrified environment. please consider to design esd protection circuit.
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